Intel shares DDR5-4800 RAM details for Alder Lake processors

0

By now, it’s common knowledge that Intel’s 12th generation Alder Lake will be the first mainstream processor platform to adopt DDR5 memory. The chipmaker (via momomo_us) has released a new document that lists the various DDR5-4800 memory modules that have been validated for its next-generation platform. Maybe one of these models will land DDR5 number one on our best RAM list.

Instead of validating the various DDR5 products itself, Intel has delegated the arduous task to Advanced Validation Labs, Inc (AVL), a renowned specialist in memory testing and validation during the pre- or post-production phase. . The company specifically focused on DDR5-4800 memory, which is the base standard for Alder Lake. These are non-ECC memory modules that follow JEDEC guidelines including 1.1V DRAM voltage and poor 40-39-39 timings.

AVL has tested memory modules from well-known vendors, such as SK hynix, Sasmsung, Micron, Crucial and Kingston. If the throughput remains the same for all candidates, the capacities vary between 8 GB and 32 GB per memory module. According to the Intel document, DRAM makers will start with 16 gigabit DDR5 RAM chips. so there is enough headroom to achieve the capacity they want to offer for each individual memory module.

One of the new features of DDR5 is on-board voltage regulation, obtained by equipping the memory module with a power management integrated circuit (PMIC). As for the initial DDR5 memory modules, they will take advantage of a PMIC from Renesas. The document did not specify the exact model of the PMIC. However, we believe it could be the P8911, which is an optimized version of the P8900 that Renesas designed for server memory.

DDR5-4800 specifications

DIMM provider DIMM part number DIMM type DIMM size Rated speed R / C DRAM provider DRAM part number DRAM density DRAM date code Die Rev Row width PMIC provider PMIC Rev
SK hynix HMCG66MEBUA081N UDIMM n-ECC 8 GB 4800 C0 SK hynix H5CG46MEBDX015 16 GB 2127 M 1Rx16 Renesas B0
SK hynix HMCG78MEBUA081N UDIMM n-ECC 16 GB 4800 A0 SK hynix H5CG48MEBDX014 16 GB 2127 M 1Rx8 Renesas B0
SK hynix HMCG88MEBUA081N UDIMM n-ECC 32 GB 4800 B0 SK hynix H5CG48MEBDX014 16 GB 2127 M 2Rx8 Renesas B0
Samsung M323R1GB4BB0-CQKOD UDIMM n-ECC 8 GB 4800 C0 Samsung K4RAH165VB-BCQK 16 GB 2137 B 1Rx16 Renesas B0
Samsung M323R1GB4BB0-CQKOD UDIMM n-ECC 16 GB 4800 A0 Samsung K4RAH086VB-BCQK 16 GB 2137 B 1Rx8 Renesas B0
Samsung M323R4GA3BB0-CQKOD UDIMM n-ECC 32 GB 4800 B0 Samsung K4RAH086VB-BCQK 16 GB 2137 B 2Rx8 Renesas B0
Micron MTC8C1084S1UC48BA1 UDIMM n-ECC 16 GB 4800 A0 Micron MT60B2G8HB-48B: A 16 GB 2137 A 1Rx8 Renesas B0
Micron MTC16C2085S1UC48BA1 UDIMM n-ECC 32 GB 4800 B0 Micron MT60B2G8HB-48B: A 16 GB 2137 A 2Rx8 Renesas B0
Crucial CT16G48C40U5 UDIMM n-ECC 16 GB 4800 A0 Micron MT60B2G8HB-48B: A 16 GB 2137 A 1Rx8 Renesas B0
Crucial CT32G48C40U5 UDIMM n-ECC 32 GB 4800 B0 Micron MT60B2G8HB-48B: A 16 GB 2137 A 2Rx8 Renesas B0
Kingston KVR48U40BS8-16 UDIMM n-ECC 16 GB 4800 A0 SK hynix H5CG48MEBDX014 16 GB 2127 M 1Rx8 Renesas B0
Kingston KVR48U40BD8-32 UDIMM n-ECC 32 GB 4800 B0 SK hynix H5CG48MEBDX014 16 GB 2127 M 2Rx8 Renesas B0

SK hynix, Samsung and Micron are integrated circuit manufacturers, so naturally they will use their own integrated circuits in their DDR5 products. Kingston, on the other hand, will use SK hynix for its integrated circuits / Meanwhile, Crucial, which is Micron’s mainstream brand, will use the latter’s integrated circuits.

If we look at ICs, it looks like SK hynix and Micron will be bringing their respective M and A matrices to DDR5. These scale well enough with higher voltages, but they aren’t exactly known to work with tight timings. This is where Samsung’s B-die ICs excelled in the DDR4 era. The document confirms that Samsung’s DDR5 ICs are Revision B, so they should be B-die. If DDR5 B-dies look like previous DDR4 B-dies, they will likely become de facto ICs again for overclockers.

Apparently the recipe does not vary with 8GB and 16GB memory modules regardless of brand. Companies will stick with a single row design, 1Rx16 for 8 GB and 1Rx8 for 16 GB. In comparison, 16 GB of DDR4 was a double row guarantee in the beginning. Eventually, many brands of memory moved to a single row design with the introduction of higher density chips. With DDR5, however, 32GB memory modules are the only sure-fire ticket to a two-row (2Rx8) layout.

Why is the above important? Dual rank memory is generally faster than single rank memory, but not in all workloads. AMD’s Intel Core and Ryzen processors both benefit from dual rank memory, and tests have shown that four ranks of memory is the ideal configuration for maximum performance. It remains to be seen if Alder Lake favors the same setup, however.



Source link

Share.

Leave A Reply